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Stoichiometric LPCVD Nitride on Silicon Wafers
  • Thickness range: 100Å – 4500Å
  • Sides processed: Both
  • Refractive index: 2.00 +/-.05 @632nm
  • Film stress: >800MPa Tensile Stress
  • Wafer size: 1" -12″inches
  • Temperature: 800C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace