Stoichiometric LPCVD Nitride on Silicon Wafers

  • Thickness range: 100Å – 4500Å
  • Sides processed: Both
  • Refractive index: 2.00 +/-.05 @632nm
  • Film stress: >800MPa Tensile Stress
  • Wafer size: 1″ -12″inches
  • Temperature: 800C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace
SKU: University-1 카테고리: 태그:
  • Thickness range: 100Å – 4500Å
  • Sides processed: Both
  • Refractive index: 2.00 +/-.05 @632nm
  • Film stress: >800MPa Tensile Stress
  • Wafer size: 1″ -12″inches
  • Temperature: 800C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace