미분류
116개의 결과 중 1–12 표시
-
C-Solder(Snbased) Wire Diameter : 1mm, Condition : Solder, Kitcontents:SA255150_C423100_AL000700_CU000747_FE240315
-
C-Solder(Snbased) Foil Thickness : 1mm, Condition : Solder
-
C-Solder(Snbased) Rod Diameter : 10mm, Condition : Solder
-
C-Solder(Snbased) Wire Diameter : 1mm, Condition : Solder
-
Graphene film Thickness : 0.500mm, MonolayerThickness : 2-3nm, Substrate:Quartzglass, Filmmorphology:Continuousmonolayer>95%, Sheetresistance:Av.<250-400ohms/sq(aftertransfer), Mobility:>3500cm2/Vs, Transmittance:>97%, DomainSize : 10-30?m
-
Graphene film Thickness : 0.500mm, Support:Removable polymer, Theoreticalmonolayer Thickness : 0.345nm, Transmittance:>97%Condition : Easytransfer
-
Graphene Ink SolidsContent:40%, Viscosity:5.5Pa.s, Thickness(wet):13%, Thickness(dry):7Micron, SheetResistivity:12Ohms/sq., Colour:Black
-
Graphene Powder Bulk density : Approx2.15g.cm-3, PlateletPlanarSize : 0.3-5?m, PlateletThickness : <50nm
-
Graphene Powder Bulk density : Approx2.15g.cm-3, PlateletPlanarSize : 0.3-5?m, PlateletThickness : <50nm, , FunctionalisationLevel:Medium, ProcessRoute:Argon
-
Graphene Powder Size : 0.3-5?m, T:<50nm
-
Graphene film Thickness : 0.035mm, MonolayerThickness : 2-3nm, Substrate:Copperfoil-0.035mmthick, Filmmorphology:Continuousmonolayer>95%, Sheetresistance:Av.<250-400ohms/sq(aftertransfer), Mobility:>3500cm2/Vs, Transmittance:>97%, DomainSize : 10-20?m
-
Graphene film Thickness : 0.525mm, MonolayerThickness : 2-3nm, Substrate:SiO2(300nm)/Siwafer(standard), Filmmorphology:Continuousmonolayer>95%, Sheetresistance:Av.<250-400ohms/sq(aftertransfer), Mobility:>3500cm2/Vs, Transmittance:>97%, DomainSize : 10-20?m